کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541855 1450399 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Removal of etching/ashing residues and ashing/wet-clean damage in porous silica low-k films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Removal of etching/ashing residues and ashing/wet-clean damage in porous silica low-k films
چکیده انگلیسی

It is demonstrated that the NH3 ashing followed by wet cleaning in carboxylic acid solution, IPA rinse and the TMCTS (1,3,5,7-tetramethylcyclotetrasiloxane) vapor anneal is an effective process for the removal of etching/ashing residues from porous silica low-k films. NH3 ashing process was the most effective way of removing etching residues as compared to the other processes such as O2 and He/H2 gas chemistries. However, NH3 ashing after to CF4 resulted in NH4F formation by the reaction of NH3 with F in the etching residue in porous silica low-k films. NH4F could be removed by a carboxylic acid solution. Although the dielectric constant increased by NH3 ashing and the wet cleaning, IPA rinse and TMCTS treatment could recover it to the initial value.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2142–2145
نویسندگان
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