کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541879 1450399 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of silicide contacts to SiGe source/drain
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Study of silicide contacts to SiGe source/drain
چکیده انگلیسی
NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, XRD (X-ray diffraction) analysis and SEM (scanning electron microscopy) inspection. From isochronal and isothermal anneals it is found that NiPt- and Pt-germanosilicide have better thermal stability compared to Ni-germanosilicide. NiPt-germanosilicide degrades morphologically, while still in the monogermanosilicide phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2268-2271
نویسندگان
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