High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits

New metal insulator metal (MIM) capacitors in parallel configuration have been implemented between upper copper interconnect levels using a damascene architecture. High frequency characterization has been performed on these devices in order to study their electrical performances. A new extraction method has been developed to obtain a lumped electrical equivalent model of MIM capacitors that is frequency dependant. Many designs have been used. Thanks to the high frequency characterization, a quality factor Q has been established.