کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5418965 | 1506986 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Third-order generalized Van Vleck perturbation theory study of the ground and lowest excited states of C2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Third-order generalized Van Vleck perturbation theory study of the ground and lowest excited states of C2 Third-order generalized Van Vleck perturbation theory study of the ground and lowest excited states of C2](/preview/png/5418965.png)
چکیده انگلیسی
Calculations of the potential curves of the ground (XΣg+1) and lowest two excited (BÎg1andBΣg+â²1) electronic states of C2 were performed using a new third-order generalized Van Vleck multireference perturbation theory (GVVPT3), along with the GVVPT2 method and the CASSCF and MRCISD approaches, using the same 6-31G* basis set used in the Abrams and Sherrill full-CI study. Calculations in the range of 1.0-3.0 Ã
, which spans the equilibrium bond length and the crossing point of the (XΣg+1) and B1Îg curves, demonstrate that the deviations of the GVVPT3 curves from the full-CI curves for all states are comparable to MRCISD. GVVPT2 provides significant improvement relative to CASSCF, which already is much improved over even high-order single reference methods. Predictions of the challenging crossing point between the (XΣg+1) and B1Îg curves, in the vicinity of the BΣg+â²1 avoided crossing with the ground state, is predicted to milliÃ¥ngstrom accuracy by MRCISD and GVVPT3, while GVVPT2 and CASSCF show deviations of about 0.07 Ã
.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Molecular Structure: THEOCHEM - Volume 771, Issues 1â3, 12 October 2006, Pages 73-78
Journal: Journal of Molecular Structure: THEOCHEM - Volume 771, Issues 1â3, 12 October 2006, Pages 73-78
نویسندگان
Wanyi Jiang, Yuriy G. Khait, Mark R. Hoffmann,