AC impedance analysis of Au/porous silicon contacts

In this paper we present the AC impedance analysis of Au/porous silicon contacts in order to investigate their conduction mechanisms. The porous silicon layer was obtained by electrochemical etching of the p-Si wafer. The measurements were made between 5 Hz and 10 MHz, at room temperature and in the DC range from 0 to 2 V. An electrical equivalent circuit was used to fit the experimental data. The voltage dependence of the fitting parameters led to a deeper understanding of the physical parameters that limit the conduction mechanisms of the Au/PS contacts.