کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541930 | 1450399 | 2006 | 8 صفحه PDF | دانلود رایگان |
The complementary metal oxide semiconductor (CMOS) surface micromachining post-process for fabricating suspended microstructures has been investigated. The post-process requires only one wet etching to remove sacrificial layers, which uses a silox vapox III etchant to etch the silicon dioxide layers and to release the suspended structures. The advantages of the post-process are easy execution and low-cost maskless wet etching. Many microstructures, which contain cantilever beams, comb structures and microrotors, are fabricated using the CMOS surface micromachining post-process. Using the same process, two devices such as a radio frequency (RF) switch and a micro-xy stage are successfully developed. Experimental results reveal that the RF switch has an insertion loss of −1.7 dB at 40 GHz and an isolation of −11 dB at 40 GHz. The driving voltage of the RF switch is 19 V.
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2543–2550