کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541931 | 1450399 | 2006 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical and dielectric properties of MIS Schottky diodes at low temperatures Electrical and dielectric properties of MIS Schottky diodes at low temperatures](/preview/png/541931.png)
The electrical and dielectric properties of the Al/SiO2/p-Si (MIS) Schottky diodes have been investigated by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements in the frequency (f) and temperature (T) range of 100 Hz–1 MHz and 80–300 K, respectively. Experimental results show that the values of dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ), ac electrical conductivity (σac) and the electric modulus were found to be a strong function of T and f. An increase in the values of the ε′ and ε″ was observed with both a decrease in frequency and an increase in temperature. The σac is found to increase with both increasing frequency and temperature. In addition, the experimental dielectrical data have been analyzed considering electric modulus formalism. The interfacial polarization can more easily occur at the lower frequency and/or with the number of interface state density between Si/SiO2 interface, consequently, which contributes to the improvement of dielectric properties of MIS Schottky diode.
Journal: Microelectronic Engineering - Volume 83, Issues 11–12, November–December 2006, Pages 2551–2557