The epitaxial crystalline silicon-oxynitride layer on SiC(0Â 0Â 0Â 1): Formation of an ideal SiC-insulator interface

► Recently discovered crystalline silicon-oxynitride film of 0.6 nm-thick. ► Epitaxially grown film on 6 H-SiC(0 0 0 1) of extremely robust against air. ► Ultrathin-oxide insulator/semiconductor interface with no dangling bond. ► Band-gap at the ultrathin oxide is fully open up to a value of quartz. ► Promising seed for nanoelectronic devices.