کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5420086 | 1395148 | 2006 | 51 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic-scale studies of hydrogenated semiconductor surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The adsorption of hydrogen on semiconductors strongly modifies the electronic and chemical properties of the surfaces, whether on the surface or in the sub-surface region. This has been the starting point, in recent years, of many new areas of research and technology. This paper will discuss the properties, at the atomic scale, of hydrogenated semiconductor surfaces studied with scanning tunnelling microscopy (STM) and synchrotron radiation. Four semiconductor surfaces will be described - germanium(1Â 1Â 1), silicon(1Â 0Â 0), silicon carbide(1Â 0Â 0) and diamond(1Â 0Â 0). Each surface has its particularities in terms of the physical and electronic structure and in regard to the adsorption of hydrogen. The manipulation of hydrogen on these surfaces by electronic excitation using electrons from the STM tip will be discussed in detail highlighting the excitation mechanisms. The reactivity of these surfaces towards various molecules and semiconductor nanocrystals will be illustrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Surface Science - Volume 81, Issue 1, 2006, Pages 1-51
Journal: Progress in Surface Science - Volume 81, Issue 1, 2006, Pages 1-51
نویسندگان
A.J. Mayne, D. Riedel, G. Comtet, G. Dujardin,