کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542229 | 871534 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A thermal model based on the polynomial relationship of ns and EF is presented. The effect of temperature rise due to self-heating is studied on various parameters viz. polarization, electron mobility, velocity saturation, low-field mobility and thermal conductivity of substrate. Parasitic resistances and channel length modulation were also taken into consideration. The relationship between self-heating effect and device parameters was studied. The model is based on closed-form expressions and does not require elaborate computation. After including self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issue 10, October 2008, Pages 1181–1188
Journal: Microelectronics Journal - Volume 39, Issue 10, October 2008, Pages 1181–1188
نویسندگان
Manju K. Chattopadhyay, Sanjiv Tokekar,