کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423081 | 1507950 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Graphene on SiC(0001) and SiC(0001Ì
) surfaces grown via Ni-silicidation reactions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents the structure and electronic properties of graphene grown on 6H-SiC(0001) and SiC(0001Ì
) surfaces via Ni-silicidation reactions at temperatures around 800 °C. Silicidation reactions take place at temperature higher than 400 °C for Ni(10 ML)/SiC and a single-phase θ-Ni2Si(0001)-layer grows epitaxially on SiC(0001Ì
) at 500 °C, whereas a mixed phase silicide-layer is formed on the SiC(0001) substrate. Annealing at 800 °C leads to growth of ordered graphite layers on both SiC(0001Ì
) and SiC(0001) surfaces with an areal occupation ratio of â¼Â 65%, which surround the Ni-silicide islands. High-resolution ion scattering analysis reveals that single- and double-layer of graphite grow on the SiC(0001Ì
) and SiC(0001), respectively. The dispersion curve of the Ï band for the double-layer graphite (DG) on the Si-face lies about 1Â eV above that of the single-layer graphite (SG) on the C-face around the Î-point. The work functions of the SG/SiC(0001Ì
) and DG/SiC(0001) are derived to be 5.15 ± 0.05 and 4.25 ± 0.05 eV, respectively, which coincide well with the theoretical prediction based on the ab initio calculations. The present results indicate that the electronic states of graphene are influenced by the interaction with supports.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 17â18, 30 August 2010, Pages 1509-1515
Journal: Surface Science - Volume 604, Issues 17â18, 30 August 2010, Pages 1509-1515
نویسندگان
T. Yoneda, M. Shibuya, K. Mitsuhara, A. Visikovskiy, Y. Hoshino, Y. Kido,