کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423466 | 1395790 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InAs/GaAs(0Â 0Â 1) wetting layer formation observed in situ by concurrent MBE and STM
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The growth of InAs on GaAs(0Â 0Â 1) has attracted great interest and investigation over the past few decades primarily due to the opto-electronic properties of the self-assembled quantum dot (QD) arrays formed. Scanning tunnelling microscopy (STM) has been extensively employed to investigate the complicated and spontaneous mechanism of QD growth via molecular beam epitaxy (MBE). In order to access surface dynamics, MBE and STM must be performed concurrently. The system herein combines MBE functionality into an STM instrument in order to investigate wetting layer formation dynamically. The GaAs(0Â 0Â 1)-(2Â ÃÂ 4) starting surface undergoes 2D island growth, reconstruction change-induced roughness and re-entrant 3D island formation prior to the Stranski-Krastanow transition point.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 603, Issue 24, 15 December 2009, Pages 3439-3444
Journal: Surface Science - Volume 603, Issue 24, 15 December 2009, Pages 3439-3444
نویسندگان
F. Bastiman, A.G. Cullis, M. Hopkinson,