کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542438 1450354 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enlarging a post-lithography pattern modification process window with a Poisson’s ratio-matching inter-layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Enlarging a post-lithography pattern modification process window with a Poisson’s ratio-matching inter-layer
چکیده انگلیسی


• Novel post-lithography pattern dimension modification technique.
• Large pattern modification process window.
• Delay crack onset strain occurrence.
• Complete inorganic metal crack generation model on organic polymer substrate under stress.

This study improved the post-lithography pattern dimension modification technique (based on an inorganic–organic multiple layer system) by introducing an inter-layer between the inorganic and organic interface. The Poisson’s ratio-matching inter-layer allowed the transfer of more external mechanical stress from the organic substrate to the inorganic structure, rather than resulting in damages, such as cracks and delamination because of material mismatch. The successful stress transfer delayed the occurrence of crack onset strain (COS) of the inorganic material, and enlarged the operation window of the mechanical stress-controlled post-lithography technique. A tunable wire-grid polarizer (WGP) was used to prove the experiment and its changeable optical extinction ratio (ER) and demonstrated the benefit of introducing an inter-layer. Cracks that occurred after the onset of COS were carefully studied to determine whether the simulation model reflected reality.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 127, 5 September 2014, Pages 97–101
نویسندگان
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