Dilute nitrides and 1.3 μm GaInNAs quantum well lasers on GaAs

We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 μm at 300 K. High quality 1.3 μm GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100×1000 μm2) is 300, 300, 400 and 940 A/cm2 for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 °C under a constant voltage has been demonstrated.