کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542520 1450356 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Transition of carbon binding states on Si(1 0 0) depending on substrate temperature and its effect on Ge growth
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Transition of carbon binding states on Si(1 0 0) depending on substrate temperature and its effect on Ge growth
چکیده انگلیسی


• Effect of binding states of carbon(C) deposited on Si(1 0 0) on Ge growth was studied.
• Fraction of Si–C bonds increased with carbon deposition temperature (TC).
• Amorphous-Ge films formed for TC of 200–800 °C due to Ge nucleation on C–C bonds.
• High-crystallinity Ge dots formed for TC of 1000 °C due to Si–C structure.

Effect of binding states of carbon(C) with Si substrate on Ge growth was studied. The samples were prepared by solid-source molecular beam epitaxy system with electron beam gun for C sublimation and K-cell for Ge evaporation. The C binding states to Si(1 0 0) surface evaluated by XPS measurement revealed a transition of the fraction of C–C and Si–C bonds depending on carbon deposition temperature (TC). The fraction of C–C bonds was major below TC = 600 °C and was almost equal to that of Si–C bonds at TC = 800–1000 °C. Surface roughening by the c(4 × 4) reconstruction induced by a large amount of Si–C bonds was observed at TC = 1000 °C. Ge equivalent to 10-nm thick was deposited on C/Si substrate at 550 °C. Amorphous Ge layers were grown for TC = 200–800 °C because Ge adatoms nucleated on the C–C structure dominantly. Structural transition from 2-D films to dome-shaped 3-D dots occurred for TC = 1000 °C due to the increase of Ge diffusion length by the Si–C structure. Concerning the dependence of C coverage, the crystallinity of Ge film deteriorated with increasing C coverage for TC = 200 °C due to the increase of C–C structure which enhances the formation of amorphous Ge. On the other hand, crystallinity of Ge dots were improved with C coverage and were saturated over 0.2 ML for TC = 1000 °C. This reflects the enlargement of dots due to C-suppressed Ge growth induced by Si–C bonds at the surface.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 125, 1 August 2014, Pages 14–17
نویسندگان
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