کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542599 1450362 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
چکیده انگلیسی


• Cu/a-SiC/Au non-volatile resistive memories were fabricated and characterized.
• Co-existence of bipolar and unipolar resistive switching behavior was reported.
• Ultrahigh ON/OFF switching ratios in the range of 108–109 were reported.
• Excellent state retention up to 10 years was also demonstrated.

Amorphous SiC based resistive memory Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. Co-existence of bipolar and unipolar behavior has been observed with ON/OFF current ratio in the range of 108–109. These high ratios are due to the conduction in the OFF state being dominated by the Schottky barrier between the Au and SiC. ON/OFF ratios exceeding 107 over 10 years were predicted from retention characterization. The unique performance combination of the extremely high ON/OFF ratio, coexistence of bipolar and unipolar switching modes as well as excellent stability and retention suggest significant application potentials of Cu/a-SiC/Au RM devices.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 119, 1 May 2014, Pages 61–64
نویسندگان
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