کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426457 | 1395889 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Structural and electronic properties of thin Ni layers on Cu(1 1 1) as investigated by ARPES, STM and GIXD Structural and electronic properties of thin Ni layers on Cu(1 1 1) as investigated by ARPES, STM and GIXD](/preview/png/5426457.png)
The growth and the crystalline and electronic structure of Ni deposited on single crystalline Cu(1Â 1Â 1) were studied by scanning tunnelling microscopy (STM), grazing incidence X-ray diffraction (GIXD) and angle-resolved photoemission spectroscopy (ARPES). In the early stages of growth monoatomic-high flat Ni islands, partially covered by Cu migrating from the surface, are observed. Starting from a pseudomorphic epitaxial relationship the in-plane lattice parameter progressively relaxes with increasing coverage. For a 20 monolayer (ML) thick deposit the in-plane lattice parameter is still found halfway between the bulk Ni and Cu lattice parameters. ARPES data also rule out the layer-by-layer growth and provide the values of the Ni exchange splitting.
Journal: Surface Science - Volume 600, Issue 18, 15 September 2006, Pages 3938-3942