کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5426828 | 1395908 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates](/preview/png/5426828.png)
چکیده انگلیسی
Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 600, Issue 12, 15 June 2006, Pages 2518-2522
Journal: Surface Science - Volume 600, Issue 12, 15 June 2006, Pages 2518-2522
نویسندگان
Genki Yoshikawa, Tetsuhiko Miyadera, Ryo Onoki, Keiji Ueno, Ikuyo Nakai, Shiro Entani, Susumu Ikeda, Dong Guo, Manabu Kiguchi, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki,