کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
542728 | 871569 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography
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کلمات کلیدی
68.35.Ct61.72.Ff85.40.Sz07.10.Pz61.10.Yh - 61.10.YH62.20.−x - 62.20.-x65.70.+y - 65.70 + Y68.35.Gy - 68.35.گ85.40.Ls - 85.40 لیتر85.40.−e - 85.40.-e89.20.+a - 89.20 + aelectronic packaging - بسته بندی الکترونیکیX-ray topography - توپوگرافی اشعه ایکسSolder bump - سرمازداییReliability - قابلیت اطمینانStrain - نژاد
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography](/preview/png/542728.png)
چکیده انگلیسی
The switch-over to the use of flip-chip Si integrated circuit bonding techniques has been driven by a need to develop higher power and lower voltage devices, capable of carrying larger currents with greater reliability. With the increased use of solder bump interconnections, an understanding of the behaviour of commonly used electroless nickel under bump metallization (UBM) layers is becoming ever more crucial. The aim of this paper is to evaluate the usefulness of white beam synchrotron X-ray topography (WBSXRT) for non-destructive evaluation of the induced mechanical stresses on Si substrates for different Ni(P) based UBM sizes and thicknesses. It is shown that WBSXRT is a powerful tool for non-destructively mapping strain and/or defect distributions within the underlying silicon substrate. Using this technique, it was also found that the crystalline misorientation induced in the underlying silicon is increased for larger UBM diameters. Stress magnitudes in the Si substrate directly under the UBM can reach values as high as 260Â MPa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 37, Issue 11, November 2006, Pages 1372-1378
Journal: Microelectronics Journal - Volume 37, Issue 11, November 2006, Pages 1372-1378
نویسندگان
D. Noonan, P.J. McNally, W.-M. Chen, A. Lankinen, L. Knuuttila, T.O. Tuomi, A.N. Danilewsky, R. Simon,