کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542874 1450375 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Microstructural void environment characterization by electron imaging in 45 nm technology node to link electromigration and copper microstructure
چکیده انگلیسی

The work presented in this paper illustrates the link between electromigration (EM) and microstructure in copper interconnects. For this study, 70 nm wide copper interconnects from 45 nm technology node are considered. Microstructure and grain orientation have been obtained in the vicinity of EM induced voids at early stage. Electron Backscattered Diffraction (EBSD) characterization is used to get microstructure and grain orientation. Then Transmission Electronic Microscope (TEM) imaging provides unambiguous location of void on EBSD map. Finally, the comparison of EBSD technique with its equivalent in TEM (commercialized as ASTAR by NanoMEGAS) shows that EBSD limitations are reached and that TEM should soon replace EBSD for local analyses. The results confirm that EM voids are nucleated at high angle misoriented grain boundaries (grain boundary with misorientation higher than 15°) and does not show link between grain orientation and electromigration phenomenon.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 106, June 2013, Pages 168–171
نویسندگان
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