High-efficiency InGaN-based LEDs grown on patterned sapphire substrates using nanoimprinting technology

This study employed roller imprint lithography and dry etching to fabricate patterned sapphire substrates (PSSs) of convex-shape with features of various heights. A soft polymer, polydimethylsiloxane (PDMS), was used as a mold to duplicate the pattern of a hard silicon template. The imprinted material was spin deposited onto a PDMS mold and transferred to the sapphire substrate using roller imprinting equipment. Inductive coupled plasma (ICP) etching was then used to fabricate the PSS. After epitaxial growth and chip processing, the current–voltage characteristics and light output of various LEDs were measured. The results demonstrate that the PSS process did not detract from the electrical properties of the LEDs; in fact, the output power of the proposed PSS LEDs was 25–30% greater than that of conventional LEDs. Simulation results show that PSS LEDs with structures of various heights would enhance optical efficiency in a manner similar to that demonstrated in these experiments.

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► Employing roller imprint lithography and dry etching to fabricate PSSs. Results show that the PSS process did not have a detrimental effect on the LEDs.
► The light extraction efficiency was increased with the higher structure.
► The output powers of PSS LEDs were greater than conventional LED.