کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
542944 1450378 2013 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Design guidelines for releasing silicon nanowire arrays by liquid and vapor phase hydrofluoric acid
چکیده انگلیسی

Silicon nanowires of various geometries are fabricated using top-down approach starting from silicon-on-insulator substrate. Arrays of nanowires presenting widths from 25 up to 100 nm regularly spaced by 50 nm up to 1 μm are patterned and released. A comparison of various release methodologies, based on scanning electron microscopy images, namely wet release in hydrofluoric acid – 5% with rinse in water or iso-propanol followed by drying by evaporation in air or using a critical point dryer, and dry release using vapor phase hydrofluoric acid is presented. Forces acting on suspended wires during release are calculated. Increase of successful release length by increasing spacing between the wires is observed for both wet and vapor phase hydrofluoric acid release techniques. Maximum detachment length of 9 μm is achieved for 50 × 100 nm2 array of nanowires spaced by 1 μm using vapor phase hydrofluoric acid etching method.

Figure optionsDownload as PowerPoint slideHighlights
► Comparison of various release methodologies for nanowires is presented.
► Forces acting on suspended wires during release are calculated.
► Increase of successful release length by increasing spacing between the wires is observed for both wet and vapor phase hydrofluoric acid release techniques.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 103, March 2013, Pages 57–65
نویسندگان
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