Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor)

The insulating active layer has a vital role in the MIM (Metal–Insulator–Metal) structure of resistive switch (memristor). Different fabrication technologies are being used to the deposition of the active layer to explore the resistive switching in metal oxides. Electrohydrodynamic atomization (EHDA) has been used in this brief to deposit an active layer for the printed resistive switch (memristor). A thin liquid jet of solution containing ZrO2 (Zirconium Dioxide) nanoparticles was generated through a metallic capillary with a constant flow rate under the electrical forces. Liquid jet was further disintegrated into small droplets, containing nanoparticles, under the influence of electrical stresses and were collected on the ITO coated PET (Polyethylene Terephthalate) to form uniform layer of ZrO2 nanoparticles. A smooth thin film was observed with an average thickness of 67 nm. Resistive (memristive) behavior was observed in the deposited thin film with ITO (Indium-Tin Oxide) as a bottom electrode and Ag as a top electrode. Bipolar reversible resistive switching was analyzed by setting different current compliances. Results reveal that EHDA has full potential to fabricate the active layer in resistive switches for printed electronics.

Experimental Setup for EHDA Printing TechnologyFigure optionsDownload as PowerPoint slideHighlights
► EHDA has been deployed to fabricate the active layer of ZrO2 for the memristor.
► ZrO2 thickness achieved through EHDA is around 67 nm.
► Fabricated memristor can be used to replace transistors in printed electronics.
► Fabricated memristor could be applied with CC of 100 μA–1 mA and then up to 5 mA.