Multilayers of Ge nanocrystals embedded in Al2O3 matrix: Structural and electrical studies

In this paper, Ge/Al2O3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I–V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.