کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543090 871628 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of pulsed laser annealing on the nickel silicide formation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
The effect of pulsed laser annealing on the nickel silicide formation
چکیده انگلیسی

The pulsed laser annealing (PLA) is used to assist nickel silicide transformation for Schottky barrier height reduction and tensile strain enhancement and the effect of different laser power are investigated. In this report, a two-step annealing process which combine the conventional rapid thermal annealing with pulsed laser annealing is proposed to achieve a smooth silicon-rich NiSix interfacial layer on (1 0 0) silicon. With optimized laser energy, a 0.2 eV Schottky barrier height (SBH) modulation is observed from Schottky diode electrical characterization. Furthermore, PLA provides sufficient effective temperature during silicidation which also lead to increased tensile stress of silicide film than the two-step RTA silicide is also investigated. The SBH modulation and tensile stress enhancement benefits of PLA silicidation are considered as an alternative to the conventional rapid thermal annealing for ultra-scaled devices performance enhancement.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 12, December 2010, Pages 2540–2543
نویسندگان
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