کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543243 871644 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of large area nano imprint technology by step and repeat process and pattern stitching technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Development of large area nano imprint technology by step and repeat process and pattern stitching technique
چکیده انگلیسی

In order to apply cost effective and productive nano imprint technology to the TFT-LCD fabrication, problems owing to large patterning area have to be solved. In this works, large area UV nano imprint process was developed by using of collimated UV light and shadow masks. It was shown that complex patterns could be easily replicated on 300 mm × 400 mm substrate by a large mold which is fabricated by suggested step and repeat process. Because roll pressing and alignment technique are important steps in our process for large area nano imprint, these process steps were optimized. Also, as a key technology for enlargement of patterning area, the stitching technique was developed. The idea using a collimated UV light is used for pattern stitching in nano imprint process. Developed large area pattern fabrication technique could be applied to various applications such as TFT-LCD process or optical film fabrication extensively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 12, December 2009, Pages 2417–2422
نویسندگان
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