Enhanced gate induced drain leakage current in HfO2 MOSFETs

The substrate current of high-κ dielectric MOSFETs has been studied using dc sweep and transient (down to 100 μs per I-V curve) electrical measurements. These measurements reveal trap-assisted substrate current components in addition to the traditional bell-shaped impact ionization current. By separating the transversal and lateral electric field contributions, the gate induced drain leakage (GIDL) is shown to dominate the substrate current at low gate biases. At high gate biases, tunneling of valence band electrons from the bulk to the gate dominates. The results show that the GIDL current is the result of band-to-band tunneling assisted by traps located at the HfO2/SiO2 interface and transition layer, and not the result of oxide charging.