کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543276 871649 2009 20 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical contacts for II–VI semiconducting devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electrical contacts for II–VI semiconducting devices
چکیده انگلیسی

High resistivity II–VI semiconductors in general and CdTe and its associated materials like CdZnTe and CdMnTe in particular are suffering from ohmic contacting problem due to their high electron affinity and consequently large work function. Ni, Au, Pt and Pd have large work function and have possibility to match with the above materials. However, except Ni other materials have problems in large-scale commercial applications. In order to overcome the ohmic contacting problem to these semiconductors the following studies has been conducted in the text of the present paper. These are: (i) Work function engineering to modulate the work function through combination materials like, Cu, Au, Mo, W and Co. (ii) Introduction of a charge diluting intermediate semiconducting layer media in between the metal and CdTe to neutralize the bound polarized charges. These two aspects were applied in case of thin film CdTe–CdS solar cells to evaluate their contacting performances and their influences in solar cell parameters. Both cell performances and the contact characteristics of these contacting technologies were studied at depth and indicated their applicability in semiconducting devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 11, November 2009, Pages 2187–2206
نویسندگان
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