کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543337 871653 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals
چکیده انگلیسی

We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2030–2033
نویسندگان
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