کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543337 | 871653 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2030–2033
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2030–2033
نویسندگان
Jaewon Jang, Kyoungah Cho, Junggwon Yun, Sangsig Kim,