کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543340 | 871653 | 2009 | 4 صفحه PDF | دانلود رایگان |

Pulsed plasma-immersion ion implantation (PIII) or Pulsed PLAsma Doping (P2LAD) is known as a cost effective solution for ultra shallow junction formation due to its capability to implant doping species at ultra-low energies (0.05–5 keV), the advantages of P2LAD, high concentration and sharp distribution of the implanted species, also make this technique a good candidate to fabricate nanocrystals (NCs) within silicon dioxide (SiO2) layer. In this work, we report Ge NC fabrication within a SiO2 layer by using the pulsed PIII technique for the first time. GeH4 (4 sccm) and He (100 sccm) gases were flown to the plasma chamber, and a voltage of 4.5 kV was applied. After pulsed PIII process, furnace annealing was performed at 900 °C in nitrogen atmosphere for Ge agglomeration. By using such a process, we fabricated non-volatile memory devices and obtained relevant program/erase, retention, and cycling characteristics.
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2045–2048