کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543344 | 871653 | 2009 | 5 صفحه PDF | دانلود رایگان |
As MuGFETs are promising contenders for the end of the silicon Roadmap, their high-temperature behaviour needs to be addressed. In this work we investigate the variations of the subthreshold slope (SS) of double-gate devices and MuGFETs with intrinsic doping as a function of the temperature and fin width. Focus is placed on the superlinear behaviour of SS occurring above a certain temperature threshold. Numerical simulations are performed using Comsol Multiphysics™ and a 1D analytical model is developed. The model, which includes the effect of film and gate oxide thickness, is shown to accurately fit the numerical data. A new definition for the subthreshold slope under high-temperature operation is proposed. The high-temperature subthreshold slope degradation is shown to increase with fin width.
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2067–2071