کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543352 871653 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reducing Cu diffusion in SiCOH low-k films by O2 plasma treatment
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Reducing Cu diffusion in SiCOH low-k films by O2 plasma treatment
چکیده انگلیسی

This work investigates the Cu diffusion in SiCOH low dielectric constant films treated by O2 plasma. By capacitance–voltage and current-voltage measurement, and thermal stress analysis, it is found that the O2 plasma surface treatment of SiCOH films can lead to the decrease of flatband voltage shift ΔVFB, the increase of activation energy Ea, and the decrease of leakage current. The small ΔVFB and lower leakage current indicate the weak Cu diffusion. The increase of active energy means the reducing of fast Cu ions surface diffusion through the interconnected pores structure of the film. Hence, the Cu diffusion in SiCOH films can be reduced by O2 plasma treatment. By FTIR and AFM analysis on the bonding configuration and microstructure, the reduce of Cu diffusion is related to the increase of Si-O cages and networks, which makes more open pores sealed at the surface of SiCOH films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2119–2122
نویسندگان
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