کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543431 | 1450394 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical models for work function control (Invited Paper)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
We have studied Fermi level pinning (FLP) of Hf-based high-k gate stacks based on thermodynamics based on an O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium. O exposure to aim O vacancy elimination is not effective, since O vacancy elimination condition is equivalent to the Si substrate oxidation which leads to the increase in Equivalent oxide thickness (EOT). We also studied the mechanism of FLP induced by the reduction with H2 anneal. FLP with H2 anneal is governed by the O vacancy annihilation reaction by reducing SiO2 interface layer. Based on these considerations, we propose some recipes for obtaining band-edge-work-function metals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1733–1736
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1733–1736
نویسندگان
Kenji Shiraishi,