کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543485 871663 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phase change materials and their application to random access memory technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Phase change materials and their application to random access memory technology
چکیده انگلیسی

Phase change materials can exist in two different phases, the amorphous and the crystalline phase, which exhibit distinctly different physical properties. It is possible to repeatedly switch the state of these materials, from the amorphous phase to the crystalline phase by heating the material above its crystallization temperature, and from the crystalline to the amorphous phase by melt-quenching. Phase change materials have been utilized very successfully in all modern optical re-writable storage media such as CDs, DVDs and Blu-ray disks. Recently, they have also been applied to solid-state memory devices where their large difference in electrical resistivity is used to store information. This paper reviews the unique properties of phase change materials in particular as they are important for their application to these devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 12, December 2008, Pages 2330–2333
نویسندگان
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