Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications

Using an unconventional approach, single crystalline Si-nanoclusters (Si-NCs) with uniform size and higher density were embedded into epitaxial rare earth oxide with two-dimensional spatial arrangements at a defined distance from the substrate using solid source molecular beam epitaxy (MBE) technique.The incorporated Si-NCs with average size of 5 nm and density of 2 × 1012 cm−2 exhibit charge storage capacity with promising retention (∼107 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O3 (Si-NC)/Si (MOS) basic memory cells with embedded Si-nanoclusters display large programming window (∼1.5–2 V) and fast writing speed. With such properties demonstrated, we believe that the Si-NCs embedded in epitaxial Gd2O3 could be potential candidate for high density nonvolatile memory devices in the future.