کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543494 | 871663 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonvolatile memory characteristics of metallic nanodots as charge-storage nodes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The charge and discharge properties of NiSi nanodots in the gate oxide of MOS and MOSFET devices were investigated in order to utilize as the charge-storage nodes in a nonvolatile floating-gate memory. NiSi nanodots were formed by sputtering Ni and successive exposing to SiH4 gas. The memory characteristics of MOS and MOSFET devices which contain the NiSi nanodots in the gate oxide were obtained through the capacitance–voltage measurements and the transient threshold voltage shift measurements. The window of threshold voltage shift was achieved to be 2.5 V when the gate bias voltages of ±20 V were applied for 1 s and 500 ms, respectively. The retention time of MOSFET memory-cell was estimated to be about 10 years.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 12, December 2008, Pages 2366–2369
Journal: Microelectronic Engineering - Volume 85, Issue 12, December 2008, Pages 2366–2369
نویسندگان
Eunkyeom Kim, Kyoungmin Kim, Daeho Son, Jeongho Kim, Kyungsu Lee, Moonsup Han, Sunghwan Won, Junghyun Sok, Wan-Shick Hong, Kyoungwan Park,