Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance–voltage (C–V) combined with current–voltage (I–V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler–Nordheim tunnelling and Poole–Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.