کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543496 | 871663 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering](/preview/png/543496.png)
چکیده انگلیسی
Charging effects in CdSe nanocrystals embedded in SiO2 matrix fabricated by rf magnetron co-sputtering technique were electrically characterized by means of capacitance–voltage (C–V) combined with current–voltage (I–V). The presence of CdSe nanocrystals was demonstrated by X-ray diffraction technique. The average size of nanocrystals was found to be approximately 3 nm. The carriers transport in the CdSe/SiO2 structure was shown to be a combination of Fowler–Nordheim tunnelling and Poole–Frenkel mechanisms. A memory effect was demonstrated and a retention time was measured.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 12, December 2008, Pages 2374–2377
Journal: Microelectronic Engineering - Volume 85, Issue 12, December 2008, Pages 2374–2377
نویسندگان
S. Levichev, A. Chahboun, P. Basa, A.G. Rolo, N.P. Barradas, E. Alves, Zs.J. Horvath, O. Conde, M.J.M. Gomes,