Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge

In this work, we present the results of dielectric relaxation and defect generation kinetics towards reliability assessments for Zr-based high-k gate dielectrics on p-Ge (1 0 0). Zirconium tetratert butoxide (ZTB) was used as an organometallic source for the deposition of ultra thin (∼14 nm) ZrO2 films on p-Ge (1 0 0) substrates. It is observed that the presence of an ultra thin lossy GeOx interfacial layer between the deposited high-k film and the substrate, results in frequency dependent capacitance–voltage (C–V) characteristics and a high interface state density (∼1012 cm−2 eV−1). Use of nitrogen engineering to convert the lossy GeOx interfacial layer to its oxynitride is found to improve the electrical properties. Magnetic resonance studies have been performed to study the chemical nature of electrically active defects responsible for trapping and reliability concerns in high-k/Ge systems. The effect of transient response and dielectric relaxation in nitridation processes has been investigated under high voltage pulse stressing. The stress-induced trap charge density and its spatial distribution are reported. Charge trapping/detrapping of stacked layers under dynamic current stresses was studied under different fluences (−10 mA cm−2 to −50 mA cm−2). Charge trapping characteristics of MIS structures (Al/ZrO2/GeOx/Ge and Al/ZrO2/GeOxNy/Ge) have been investigated by applying pulsed unipolar (peak value – 10 V) stress having 50% duty-cycle square voltage wave (1 Hz–10 kHz) to the gate electrode.