کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543583 871673 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Filling trenches on a SiO2 substrate with Cu using a hot refractory anode vacuum arc
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Filling trenches on a SiO2 substrate with Cu using a hot refractory anode vacuum arc
چکیده انگلیسی

First results of complete filling of 100 nm wide × 300 nm deep trenches with Cu using the expanding plasma plume from a hot refractory anode vacuum arc (HRAVA) plasma source are presented. The arc was ignited between a consumed water-cooled cylindrical Cu cathode (30 mm diameter) and a non-consumed W cylindrical anode (32 mm diameter, 30 mm height) that was heated by the arc. An arc current of 200 A was applied for periods of 180 s. The films were deposited on a Si substrate with a top SiO2 layer. The substrates were exposed to the plasma plume for 120 s, while a shutter was open. The distance to the substrate from the electrode axis was varied over the range of about 74–122 mm. A pulsed bias voltage of −75 or −100 V, with a 60 kHz pulse repetition rate and a 50–80% duty cycle was applied to the substrate. The films were examined using a scanning electron microscope. The average film resistivity was measured with a four point probe. The deposition rate was as high as 425 nm/min, and the minimum average resistivity was 5.5 μΩ cm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 8, August 2008, Pages 1713–1716
نویسندگان
, , , ,