Electrical and photovoltaic properties of a n-Si/chitosan/Ag photodiode

The electrical and photovoltaic properties of AuSb/n-Si/chitosan/Ag diode have been investigated. The ideality factor, barrier height and Richardson constant values of the diode at room temperature were found to be 1.91, 0.88 eV and 121.4 A/cm2 K2, respectively. The ideality factor of the diode is higher than unity, suggesting that the diode shows a non-ideal behaviour due to series resistance and barrier height inhomogeneities. The barrier height and ideality factor values of Ag/CHT/n-Si diode at room temperature are significantly larger than that of the conventional Ag/n-Si Schottky diode. The φB value obtained from C–V measurement is higher than that of φB value obtained from I–V measurement. The discrepancy between φB(C–V) and φB(I–V) barrier height values can be explained by Schottky barrier height inhomogeneities. AuSb/n-Si/chitosan/Ag diode indicates a photovoltaic behaviour with open circuit voltage (Voc = 0.23 V) and short-circuit current density (Jsc = 0.10 μA/cm−2) values.