کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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543680 | 1450396 | 2008 | 4 صفحه PDF | دانلود رایگان |

Electron beam direct write (EBDW) provides high resolution for device and technology development. A new variable shaped beam system with improved electron optics was introduced, which features the capability for the 32 nm node. Because of the limited resolution of commercially available chemically amplified resists at this node, it is important to determine a stable and optimum resist process window. To compare a process window under different premises, a universally applicable and low error-prone method is needed. The isofocal dose method is investigated with regard to these properties for its use in EBDW. Experiments were performed on 50 kV variable shaped electron beam direct writers using the new electron-optical column SB3050 DW (Vistec Electron Beam GmbH). Exposures are performed at different sites in Dresden (Fraunhofer CNT/Qimonda Dresden), Jena (Vistec) and Stuttgart (IMS Chips); also patterns are exposed on different layer stacks at one site. The strong need for a process window can be fulfilled by the isofocal dose method, which will be shown by contour plots.
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 778–781