Improvement of high resolution lithography by using amorphous carbon hard mask

The aim of this paper is to demonstrate a new approach for improving high resolution lithography by using an amorphous carbon hard mask with an oxide capping layer. A full 3D resist pattern characterization was achieved using a Vecco Dimension X3D Atomic Force Microscope to determine process windows. Finally, we succeeded in patterning sub-30 nm dense line arrays. This novel technique was also used to achieve sub-30 nm FDSOI transistor gates by hybrid lithography (e-beam/DUV).