کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543686 1450396 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Towards 2–10 nm electron-beam lithography: A quantitative approach
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Towards 2–10 nm electron-beam lithography: A quantitative approach
چکیده انگلیسی

This paper deals with three important contributions to quantitative electron beam patterning in the 2–10 nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimization of exposure procedure for optimum beam focus settings. And thirdly, investigation of the broadening effect of secondary electrons (SE) on the exposure process in the resists. The combined results provide a quantitative picture of limiting factors for the achievement of ultimate resolution.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 805–809
نویسندگان
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