کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543723 1450396 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Processing effects on the dissolution properties of thin chemically amplified photoresist films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Processing effects on the dissolution properties of thin chemically amplified photoresist films
چکیده انگلیسی

Resist film thickness is anticipated to be 60 nm in the 22 nm technology node setting significant processing challenges due to resist non-bulk behavior. The changes in the dissolution rate of a positive DUV polymer based chemically amplified resist due to various processing conditions such as film thickness, exposure dose, and thermal processing conditions, are experimentally investigated. It is quantified among others, the way an increase of PAB temperature deteriorates dissolution rate at low exposure dose, while in higher exposure doses increasing PAB temperature enhances dissolution rate. Also, an analytic model for the dissolution rate is imported on a stochastic lithography simulator and first quantitative results for thin films are reported.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 955–958
نویسندگان
, , , , ,