کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543734 1450396 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon
چکیده انگلیسی

For the simulation of etching processes, a key step is the calculation of the etch rates depending on the specific model and depending on the specific geometry of the feature. In this work, we demonstrate the calculation of etch rates using a Monte Carlo, a flux balancing, and an analytical approach. For a relatively simple model for etching of polysilicon in chlorine-based chemistry, the three approaches are compared and microtrenching is studied which results from the specular reflection of ions and depends on different parameters. The results for the different approaches are in good agreement for the cases studied.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 992–995
نویسندگان
, ,