کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543738 1450396 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Etching of sub-micrometer structures through Stencil
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Etching of sub-micrometer structures through Stencil
چکیده انگلیسی

Resistless processes to realize the pattern transfer of your designs into the substrate present some advantages, as the reduction in fabrication steps. Stencil Lithography (SL) is one of the most used resistless processes and, up to now, it has mainly been used to perform local selective deposition of materials. Here, the local etching of different substrates through a stencil hard mask is presented. The compatibility with different etching conditions, the scalability of the technique and the main challenges are described. Minimum feature dimensions of 500 nm in polysilicon and 200 nm in LS-SiN is presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 1010–1014
نویسندگان
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