کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543738 | 1450396 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etching of sub-micrometer structures through Stencil
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Etching of sub-micrometer structures through Stencil Etching of sub-micrometer structures through Stencil](/preview/png/543738.png)
چکیده انگلیسی
Resistless processes to realize the pattern transfer of your designs into the substrate present some advantages, as the reduction in fabrication steps. Stencil Lithography (SL) is one of the most used resistless processes and, up to now, it has mainly been used to perform local selective deposition of materials. Here, the local etching of different substrates through a stencil hard mask is presented. The compatibility with different etching conditions, the scalability of the technique and the main challenges are described. Minimum feature dimensions of 500 nm in polysilicon and 200 nm in LS-SiN is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 1010–1014
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 1010–1014
نویسندگان
G. Villanueva, O. Vazquez-Mena, M.A.F. van den Boogaart, K. Sidler, K. Pataky, V. Savu, J. Brugger,