کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543745 | 1450396 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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![عکس صفحه اول مقاله: RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate](/preview/png/543745.png)
چکیده انگلیسی
A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of TiO2, a down/up capacitive ratio close to 200 is achieved with 8 V pull-in. It is also demonstrated that, using a passivated-surface HRS and semi-suspended conductors on air, the microwave losses in the CPW line are as low as 0.1 dB/mm at 20 GHz. The reported RF MEMS shunt capacitor is expected to serve as core device for phase shifting applications in the 10–20 GHz range, both for switching operations and as a variable capacitor in distributed MEMS transmission lines (DMTLs).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 1039–1042
Journal: Microelectronic Engineering - Volume 85, Issues 5–6, May–June 2008, Pages 1039–1042
نویسندگان
M. Fernández-Bolaños, J. Perruisseau-Carrier, P. Dainesi, A.M. Ionescu,