کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5437564 | 1398175 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of yttrium additions on the microstructure and charge transport properties of indium tin oxide semiconductors
ترجمه فارسی عنوان
اثر افزودنی های یتیم بر خواص انتقال ریزساختار و شارژ نیمه هادی های اکسید تیتانیوم
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
سل ژل، نیمه هادی اکسید، جای خالی اکسیژن، ایتریم، دوپینگ
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
چکیده انگلیسی
The effects of yttrium (Y) additions (x=0, 0.05, 0.1, and 0.2) on the microstructure, chemical structure, and electrical properties of YxInSnOy (YITO) thin films, prepared using a sol-gel process were examined. The transmission electron microscopy (TEM) observations showed that the undoped InSnO (ITO) film consisted of an amorphous structure with local crystalline domains on the film surface, whereas the Y additions (x=0.05, 0.1, and 0.2) to ITO suppressed the formation of the crystalline phase. X-ray photoelectron spectroscopy (XPS) analysis showed that the Y content decreased the concentration of oxygen vacancies owing to the strong incorporation of Y with oxygen. As a result of the Y incorporation, the carrier concentration of ITO films decreased. The saturation mobility (μsat), the on-off ratios (Ion/off), and the sub-threshold swing (S.S) of YITO films were 1.1 cm2 Vâ1 sâ1, ~106, and ~0.5 V decadeâ1, respectively, which are comparable with 1.7 cm2 Vâ1 sâ1, ~105, and ~1.17 V decadeâ1 of ITO film. Additionally, the initial threshold voltage (VTH) was positive shift with increased of Y addition and VTH shift (ÎVTH) under the positive bias stress (PBS) results decreased by Y addition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 7, May 2017, Pages 5574-5578
Journal: Ceramics International - Volume 43, Issue 7, May 2017, Pages 5574-5578
نویسندگان
Jun Hyuk Choi, Chang Min Lee, Seung Muk Lee, Geun Chul Park, Byung-Hyuk Jun, Jinho Joo, Jun Hyung Lim,