کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543845 871689 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Etching characteristics of photoresist and low-k dielectrics by Ar/O2 ferrite-core inductively coupled plasmas
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Etching characteristics of photoresist and low-k dielectrics by Ar/O2 ferrite-core inductively coupled plasmas
چکیده انگلیسی

We have investigated the characteristics of Ar/O2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O2/(O2+ Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-k material decreased with decreasing O2/(O2 + Ar) gas flow ratio.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 300–303
نویسندگان
, , , , , , , , , , , , , , , , ,