کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543846 | 871689 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly (1Â 0Â 0)-oriented Pb(Zr0.20Ti0.80)O3/(Pb1âxLax)Ti1âx/4O3 multilayered thin films prepared by RF magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The Pb(Zr0.20Ti0.80)O3/(Pb1âxLax)Ti1âx/4O3 (x = 0, 0.10, 0.15, 0.20) (PZT/PLTx) multilayered thin films were in situ deposited on the Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by RF magnetron sputtering technique with a PbOx buffer layer. With this method, all PZT/PLTx multilayered thin films possess highly (1 0 0) orientation. The PbOx buffer layer leads to the (1 0 0) orientation of the multilayered thin films. The effect of the La content in PLTx layers on the dielectric and ferroelectric properties of the PZT multilayered thin films was systematically investigated. The enhanced dielectric and ferroelectric properties are observed in the PZT/PLTx (x = 0.15) multilayered thin films. The dielectric constant reaches maximum value of 365 at 1 KHz for x = 0.15 with a low loss tangent of 0.0301. Along with enhanced dielectric properties, the multilayered thin films also exhibit large remnant polarization value of 2Pr = 76.5 μC/cm2, and low coercive field of 2Ec = 238 KV/cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 304-307
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 304-307
نویسندگان
Jiagang Wu, Dingquan Xiao, Jiliang Zhu, Jianguo Zhu, Junzhe Tan, Qinglei Zhang,